Indium Foil

Goodfellow's indium foil is offered with a maximum purity of 99.999% (5N), providing unique properties including low melting point, high ductility, and excellent wetting characteristics. These properties make it invaluable in the production of low-temperature solders, liquid crystal displays (LCDs), and touch screens. In the semiconductor industry, indium foil is a key component in the manufacture of compound semiconductors like indium gallium arsenide, used in high-speed electronics and photonics. Its use in transparent conductive coatings for solar cells and smart windows highlights its role in energy-efficient technologies. For research purposes, high-purity indium foil is crucial for developing new alloys, studying superconductivity, and advancing thin-film deposition techniques.

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Tolerance

Properties

Reference & Citations

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Tolerances

Foil/Film/Sheet

Thickness	<0.01mm	±25%
Thickness	0.01mm - 0.05mm	±15%
Thickness	>0.05mm	±10%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	49
Crystal structure	Face centred tetragonal
Electronic structure	Kr 4d¹⁰ 5s² 5p¹
Valences shown	1, 2, 3
Atomic weight( amu )	114.82
Thermal neutron absorption cross-section( Barns )	194
Photo-electric work function( eV )	4.12
Natural isotope distribution( Mass No./% )	113/ 4.3
Natural isotope distribution( Mass No./% )	115/ 95.7
Atomic radius - Goldschmidt( nm )	0.157
Ionisation potential( No./eV )	3/ 28.0
Ionisation potential( No./eV )	Apr-54
Ionisation potential( No./eV )	2/ 18.9
Ionisation potential( No./eV )	1/ 5.79

Mechanical Properties

Element	Value
Material condition	Polycrystalline
Material condition	Soft
Poisson's ratio	0.45
Poisson's ratio	0.45
Bulk modulus( GPa )	35.3
Bulk modulus( GPa )	35.3
Tensile modulus( GPa )	10.6
Tensile modulus( GPa )	10.6
Hardness - Vickers( kgf mm⁻² )	10
Tensile strength( MPa )	2.6-4.5

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	8.8@20@20°C
Superconductivity critical temperature( K )	3.41
Temperature coefficient( K⁻¹ )	0.0052@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.69

Physical Properties

Element	Value
Boiling point( C )	2080
Density( gcm⁻³ )	7.3@20°C

Thermal Properties

Element	Value
Melting point( C )	156.6
Latent heat of evaporation( J g⁻¹ )	2024
Latent heat of fusion( J g⁻¹ )	28.5
Specific heat( J K⁻¹ kg⁻¹ )	234@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	81.8@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	24.8@0-100°C